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kicad/eeschema/sim/sim_model_ngspice_data_mos6...

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/*
* This program source code file is part of KiCad, a free EDA CAD application.
*
* Copyright (C) 2022 Mikolaj Wielgus
* Copyright The KiCad Developers, see AUTHORS.TXT for contributors.
*
* This program is free software; you can redistribute it and/or
* modify it under the terms of the GNU General Public License
* as published by the Free Software Foundation; either version 2
* of the License, or (at your option) any later version.
*
* This program is distributed in the hope that it will be useful,
* but WITHOUT ANY WARRANTY; without even the implied warranty of
* MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE. See the
* GNU General Public License for more details.
*
* You should have received a copy of the GNU General Public License
* along with this program; if not, you may find one here:
* http://www.gnu.org/licenses/old-licenses/gpl-2.0.html
* or you may search the http://www.gnu.org website for the version 2 license,
* or you may write to the Free Software Foundation, Inc.,
* 51 Franklin Street, Fifth Floor, Boston, MA 02110-1301, USA
*/
#include <sim/sim_model_ngspice.h>
void NGSPICE_MODEL_INFO_MAP::addMOS6()
{
modelInfos[MODEL_TYPE::MOS6] = { "Mos6", "NMOS", "PMOS", { "D", "G", "S", "B" }, "Level 6 MOSfet model with Meyer capacitance model", {}, {} };
// Model parameters
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "type", 140, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_STRING, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "nmos", "pmos", "N-channel or P-channel MOS" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "vto", 101, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Threshold voltage" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "vt0", 101, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "n.a." );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "kv", 102, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "2", "2", "Saturation voltage factor" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "nv", 103, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Saturation voltage coeff." );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "kc", 104, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "5e-05", "5e-05", "Saturation current factor" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "nc", 105, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Saturation current coeff." );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "nvth", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Threshold voltage coeff." );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "ps_", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Sat. current modification par." );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "gamma", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "sqrt V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bulk threshold parameter" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "gamma1", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "sqrt V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bulk threshold parameter 1" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "sigma", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "static const feedback effect par." );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "phi", 111, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.6", "0.6", "Surface potential" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "lambda", 112, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Channel length modulation param." );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "lambda0", 113, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Channel length modulation param. 0" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "lambda1", 114, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Channel length modulation param. 1" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "rd_", 115, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "rs_", 116, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "cbd_", 117, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-D junction capacitance" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "cbs_", 118, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-S junction capacitance" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "is_", 119, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Bulk junction sat. current" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "pb", 120, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.8", "0.8", "Bulk junction potential" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "cgso", 121, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-source overlap cap." );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "cgdo", 122, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-drain overlap cap." );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "cgbo", 123, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-bulk overlap cap." );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "rsh", 131, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "Ω/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Sheet resistance" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "cj", 124, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bottom junction cap per area" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "mj", 125, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Bottom grading coefficient" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "cjsw", 126, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Side junction cap per area" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "mjsw", 127, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Side grading coefficient" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "js", 128, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A/m²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bulk jct. sat. current density" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "ld", 130, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Lateral diffusion" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "tox", 129, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Oxide thickness" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "u0", 132, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "cm²/V s", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Surface mobility" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "uo", 132, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "n.a." );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "fc", 133, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Forward bias jct. fit parm." );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "nmos", 137, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "N type MOSfet model" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "pmos", 138, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "P type MOSfet model" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "tpg", 135, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate type" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "nsub", 134, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/cm³", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Substrate doping" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "nss", 136, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/cm²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Surface state density" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "tnom", 139, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "300.15", "300.15", "Parameter measurement temperature" );
// Instance parameters
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "l", 2, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Length", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "w", 1, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Width", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "m", 22, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Parallel Multiplier", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "ad", 4, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Drain area", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "as", 3, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Source area", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "pd", 6, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Drain perimeter", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "ps", 5, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "0", "0", "Source perimeter", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "id", 215, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain current", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "cd", 215, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain current", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "is", 18, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "1e-14", "1e-14", "Source current", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "ig", 17, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate current", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "ib", 16, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk current", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "ibs", 216, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "B-S junction capacitance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "ibd", 217, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "B-D junction capacitance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "vgs", 231, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source voltage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "vds", 232, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain-Source voltage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "vbs", 230, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Source voltage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "vbd", 229, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Drain voltage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "nrd", 8, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Drain squares", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "nrs", 7, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Source squares", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "off", 9, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Device initially off", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "icvds", 12, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial D-S voltage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "icvgs", 13, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial G-S voltage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "icvbs", 11, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial B-S voltage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "temp", 20, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::PRINCIPAL, "", "", "Instance temperature", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "dtemp", 21, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Instance temperature difference", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "ic", 10, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_FLOAT_VECTOR, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Vector of D-S, G-S, B-S voltages", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_l", 15, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "flag to request sensitivity WRT length", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_w", 14, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "flag to request sensitivity WRT width", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "dnode", 203, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of the drain node", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "gnode", 204, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of the gate node", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "snode", 205, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of the source node", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "bnode", 206, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of the node", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "dnodeprime", 207, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of int. drain node", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "snodeprime", 208, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of int. source node", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "rs", 258, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Source resistance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sourceconductance", 209, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Source conductance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "rd", 259, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Drain resistance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "drainconductance", 210, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain conductance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "von", 211, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Turn-on voltage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "vdsat", 212, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Saturation drain voltage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sourcevcrit", 213, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Critical source voltage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "drainvcrit", 214, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Critical drain voltage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "gmbs", 218, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Source transconductance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "gm", 219, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Transconductance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "gds", 220, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain-Source conductance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "gbd", 221, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Drain conductance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "gbs", 222, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Source conductance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "cgs", 233, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source capacitance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "cgd", 236, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Drain capacitance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "cgb", 239, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Bulk capacitance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "cbd", 223, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Bulk-Drain capacitance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "cbs", 224, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Bulk-Source capacitance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "cbd0", 225, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Zero-Bias B-D junction capacitance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "cbs0", 227, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Zero-Bias B-S junction capacitance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "cqgs", 235, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-source charge storage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "cqgd", 238, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-drain charge storage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "cqgb", 241, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-bulk charge storage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "cqbd", 243, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to bulk-drain charge storage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "cqbs", 245, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to bulk-source charge storage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "qgs", 234, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source charge storage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "qgd", 237, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Drain charge storage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "qgb", 240, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Bulk charge storage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "qbd", 242, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Drain charge storage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "qbs", 244, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Source charge storage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "p", 19, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Instaneous power", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_l_dc", 256, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "dc sensitivity wrt length", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_l_real", 246, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "real part of ac sensitivity wrt length", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_l_imag", 247, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "imag part of ac sensitivity wrt length", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_l_mag", 248, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "sensitivity wrt l of ac magnitude", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_l_ph", 249, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "sensitivity wrt l of ac phase", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_l_cplx", 250, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_COMPLEX, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "ac sensitivity wrt length", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_w_dc", 257, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "dc sensitivity wrt width", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_w_real", 251, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "real part of ac sensitivity wrt width", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_w_imag", 252, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "imag part of ac sensitivity wrt width", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_w_mag", 253, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "sensitivity wrt w of ac magnitude", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_w_ph", 254, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "sensitivity wrt w of ac phase", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_w_cplx", 255, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_COMPLEX, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "ac sensitivity wrt width", true );
}